Microsemi's 1200V SiC
MOSFETs are establishing a new benchmark for performance," said Marc Vandenberg, general manager for Microsemi's Power Products Group.
Formation of two-dimensional electron gases in polytypic SiC
In the case of the untreated SiC
substrate, the correction for negative charging effects was assessed by setting the C1s component due to a hydrocarbon contamination at 285 eV.
INTRINSIC Semiconductor Corporation of Dulles, Virginia, was founded in 2002, with the mission of developing materials and device technologies based on SiC
and GaN materials.
INTRINSIC manufactures both insulating and conducting SiC
wafers, as well as SiC
and GaN epitaxial products in 50mm, 75mm and 100mm diameters.
substrates is an equally important aspect of commercialization of SiC
and GaN products address large growing opportunities in the power and RF markets, respectively.
AMDS allows INTRINSIC to immediately offer a portfolio of discrete SiC