(redirected from Grain growth)
Also found in: Dictionary, Thesaurus, Medical, Financial, Encyclopedia, Wikipedia.
Related to Grain growth: Recrystallization, hot working

GRAIN, weight. The twenty-fourth part of a pennyweight.
     2. For scientific purposes the grain only is used, and sets of weights are constructed in decimal progression, from 10,000 grains downward to one hundredth of a grain.

GRAIN, corn. It signifies wheat, rye, barley, or other corn sown in the ground In Pennsylvania, a tenant for a certain term is entitled to the way- going crop. 5 inn. 289, 258; 2 Binn. 487; 2 Serg. & Rawle, 14.

A Law Dictionary, Adapted to the Constitution and Laws of the United States. By John Bouvier. Published 1856.
References in periodicals archive ?
Grain growth was proportional to the amount of dopant added.
Ultrafine WC-Ni cemented carbides with varied fractions of SiC nanowhisker were fabricated by SPS at 1350[degrees] C with the assistance of VC and TaC as WC grain growth inhibitors.
As no extra Se was added in the furnace (0.0 g), the grain growth and roughness surface were really observed.
Below certain temperature, the SMAT sample can maintain its ultrafine-grained surface layer since the temperature is still not high enough for severe grain growth. Thus, the Al diffusion is dominated by a fast GB diffusion controlled mechanism.
Apparently we're seeing early grain growth where new stars and solar systems are forming, or are about to form.
Other major themes are ductility of thin films and nano-layers, ductility of metallic glass and composites, and recovery and grain growth. Some specific topics covered include the effect of grain size on defect density and internal stresses in sub-microcrystals, ultrahigh strength and ductility of Cu-Nb nanolayered composites, nanostructured Ti2448 biomedical titanium alloy, and the effect of aging on strength and ductility of ultrafine grained Al 6061 alloy.
This orientation of the twinned boundaries indicates that the twin-oriented domains form as a result of the formation of errors in the sequence of laying the atomic layers {111} of the FCC lattice of copper during grain growth. These errors at the solidification front may form as a result of the small difference of the free energies of the nucleation islands with the regular and irregular packing of the atoms in relation to the crystal surface (7).
The decrease of the Seebeck coefficient above 220-250 [degrees]C for [Bi.sub.2][Te.sub.3], [Bi.sub.2][(Se,Te).sub.3] and the [Bi.sub.2][Te.sub.3]/[Bi.sub.2][(Se,Te).sub.3] stack with 100 nm periods may be caused by to the grain growth, which induces a decrease to the grain boundary scattering.
One section discusses the technical and practical benefits of Johnson Matthey's zirconia grain stabilized (ZGS) platinum, which resists grain growth that can lead to creep deformation and contamination failure.