It is demonstrated that a surface anneal step for the special gate stack structure comprising of N[H.sub.3]/sub 3/ambient Hf[O.sub.x]/sub 2 post-dielectric deposition results in significant improvements in both the equivalent oxide thickness (EOT) and the gate leakage current
. It is also shown that it is possible to achieve Ge/GeON/HfO/sub 2//TiN gate stacks with an EOT of 0.7 nm with a leakage current
of 0.84 A/cm/sup 2/at -2V gate bias.
To avoid the leakage currents
, different inverter topologies that generate constant common mode voltages have been proposed.
[P.sub.r] [E.sub.c] Material ([micro]C/[cm.sup.2]) (MV/m) PVDF-TrFE 6.3 77.0 PVDF-TrFE-CFE20% 4.6 66.4 PVDF-TrFE-CFE30% 4.4 52.6 PVDF-TrFE-CFE50% 4.1 49.8 PVDF-TrFE-CFE60% 2.4 39.8 P(VDF-TrFE-CFE) 100% 1.1 5.9 Energy density [epsilon] Material (J/[cm.sup.3]) (10 kHz) Loss PVDF-TrFE i.i 12 0.08 PVDF-TrFE-CFE20% 2.0 21 0.09 PVDF-TrFE-CFE30% 2.7 29 0.11 PVDF-TrFE-CFE50% 3.3 40 0.12 PVDF-TrFE-CFE60% 4.2 53 0.10 P(VDF-TrFE-CFE) 100% 3.6 47 0.13 Leakage current
Material (A/[cm.sup.2]) at 40 MV/nt PVDF-TrFE 5.6E-6 PVDF-TrFE-CFE20% 1.0E-6 PVDF-TrFE-CFE30% 3.8E-7 PVDF-TrFE-CFE50% 2.2E-7 PVDF-TrFE-CFE60% 1.4E-7 P(VDF-TrFE-CFE) 100% 8.6E-8
Such value of leakage current
may cause nuisance tripping of protective devices--residual current devices.
Toda, "Asymmetric Hysteresis Loops, Leakage Current
and Capacitance Voltage Behaviors in Ferroelectric PZT Films Deposited on a Pt/A[l.sub.2][O.sub.3]/Si[O.sub.2]/Si Substrate by MOCVD method with a vapor-deposited Gold Top Electrode," International Journal of Applied Physics and Mathematics, vol.
Unlike leakage current
, [I.sub.ON] drops by a factor of 1.5 by varying [V.sub.BG] from 0 V to -0.4 V which is less significant than the drop in [I.sub.OFF].
Model RLM-1 flexible leakage current
tester: This is a unique leakage current
tester with highly sensitive flexible current sensor.
The advantage of the platinum doping process is to reduce leakage current
by approximately 100 times, compared to gold doping, providing scope to improve VF at a given trr.
Production testing of diodes involves a qualification step to determine the polarity of the diode under test, followed by measurements of forward voltage, reverse breakdown voltage and leakage current
(see Figure 2).
Using a new gate dielectric material, Toshiba has developed a CMOS transistor that reduces gate leakage current
to a level only 1/1000 that of CMOS transistors with conventional gate dielectrics.
Later, due to technological advances, most U.S.-made hairdryers were marketed with appliance leakage current
interrupter plugs (ACLI plugs) which act to cut off electrical current when the product comes into contact with water.
Electrical measurements that can be performed include forward voltage, forward current and leakage current
, according to the company.