Memory

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MEMORY. Understanding; a capacity to make contracts, a will, or to commit a crime, so far as intention is necessary.
     2. Memory is sometimes employed to express the capacity of the understanding, and sometimes its power; when we speak of a retentive memory, we use it in the former sense; when of a ready memory, in the latter. Shelf. on Lun. Intr. 29, 30.
     3. Memory, in another sense, is the reputation, good or bad, which a man leaves at his death. This memory, when good, is highly prized by the relations of the deceased, and it is therefore libelous to throw a shade over the memory of the dead, when the writing has a tendency to create a breach of the peace, by inciting the friends and relations of the deceased to avenge the insult offered to the family. 4 T. R. 126; 5 Co. R. 125; Hawk. b. 1, c. 73, s. 1.

MEMORY, TIME OF. According to the English common law, which has been altered by 2 & 3 Wm. IV., c. 71, the time of memory commenced from the reign of Richard the First, A. D. 1189. 2 Bl. Com. 31.
     2. But proof of a regular usage for twenty years, not explained or contradicted, is evidence upon which many public and private rights are held, and sufficient for a jury in finding the existence of an immemorial custom or prescription. 2 Saund. 175, a, d; Peake's Ev. 336; 2 Price's R. 450; 4 Price's R. 198.

References in periodicals archive ?
THE PROGRAMMING PHASE FOR 3-BITS MEMRISTOR MEMORY CELL USING POSITIVE PULSE WITH [B.sub.w+] OF 1.2E-1 AS PREPARED FOR READING USING POSITIVE OR NEGATIVE PULSES.
Classification Iris Wine methods Classification performances Proposed 97.33 [+ or -] 3.06 97.6 [+or -] 3.98 classifier [5] 96.3 [+ or -] 4.7 96.1 [+or -]4.7 [3] 94.8 -- [2] 95.7 -- Classification Sonar methods Classification performances Proposed 92.17 [+ or -] 2.92 classifier [5] -- [3] 89.1 [2] 84.9 Classification Iris Wine Sonar Methods Number of memory cells Proposed 21 30 60 classifier [5] 100 100 -- [3] 28 -- 71 [2] 32 -- 17 TABLE 2: Comparison of results for the proposed approach.
Zous et al., "Cause of data retention loss in a nitride-based localized trapping storage flash memory cell," in Proceedings of the 40th annual IEEE International Relaibility Physics Symposium Proceedings, pp.
"Not only does this test chip show a 70% improvement in its memory bit yield compared to standard STT-MRAM, but its memory cell area is reduced by 30%," says Endoh.
Table 1: Electrical values for the memory cell. Electrical parameter Value [V.sub.DD1] 3.3 V [V.sub.DD2] 8V [C.sub.1] 1 pF [C.sub.2] 3 fF [C.sub.par] 360 fF [R.sub.1], [R.sub.2] 1E99 [OMEGA] [MFG.sub.1,2] 6 [micro]m/3 [micro]m Ml, M2, M4, M5 6 [micro]m/3 [micro]m M3 30 [micro]m/1.5 [micro]m M6, M9 12 [micro]m/6 [micro]m M7, M8 30 [micro]m/6 [micro]m M10 12 [micro]m/6 [micro]m Mil 60 [micro]m/6 [micro]m M12 100 [micro]m/1.5 [micro]m [I.sub.bias] 50 [micro]A [V.sub.ref] 1.5 V [V.sub.bl] 3.3 V [V.sub.read] 0-3.3 V
These errors are often manifested as logic state disturbances of memory cells or disturbances in sense amplifiers; it is seldom a function disturbance of peripheral circuits in a memory chip.
The vertical flash memory cell is based on well-known SGT technology and uses single crystalline silicon material.
The technology features the smallest SRAM memory cell in production at 2.16 square microns, which allows for more high-performance memory to be placed directly onto a chip, resulting in faster, more efficient processors.
The company says ACE/2's copper process provides a six-to-seven times improvement in circuits and memory cell density over the aluminum-based ACE/1.
TEHRAN (FNA)- Russian scientists developed a fundamentally new type of memory cell based on superconductors -- this type of memory will be able to work hundreds of times faster than the types of memory devices commonly used today.
With each new manufacturing process, fewer electrons are stored in each memory cell, leading to greater susceptibility to data loss, Wong said.
The series comprises three models: the 4082A Parametric Test System for general-purpose parametric test, the 4082F Flash Memory Cell Parametric Test System for NAND/NOR flash test, and the 4083A DC/RF Parametric Test System for high-frequency measurement requirements of RF devices.