memory

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memory

(Commemoration), noun celebration, writing

memory

(Retention), noun mind, recalling, reflection
See also: hindsight, recognition, recollection, remembrance, retention, retrospect

MEMORY. Understanding; a capacity to make contracts, a will, or to commit a crime, so far as intention is necessary.
     2. Memory is sometimes employed to express the capacity of the understanding, and sometimes its power; when we speak of a retentive memory, we use it in the former sense; when of a ready memory, in the latter. Shelf. on Lun. Intr. 29, 30.
     3. Memory, in another sense, is the reputation, good or bad, which a man leaves at his death. This memory, when good, is highly prized by the relations of the deceased, and it is therefore libelous to throw a shade over the memory of the dead, when the writing has a tendency to create a breach of the peace, by inciting the friends and relations of the deceased to avenge the insult offered to the family. 4 T. R. 126; 5 Co. R. 125; Hawk. b. 1, c. 73, s. 1.

MEMORY, TIME OF. According to the English common law, which has been altered by 2 & 3 Wm. IV., c. 71, the time of memory commenced from the reign of Richard the First, A. D. 1189. 2 Bl. Com. 31.
     2. But proof of a regular usage for twenty years, not explained or contradicted, is evidence upon which many public and private rights are held, and sufficient for a jury in finding the existence of an immemorial custom or prescription. 2 Saund. 175, a, d; Peake's Ev. 336; 2 Price's R. 450; 4 Price's R. 198.

References in periodicals archive ?
Small but quick memory cells can be designed by using the results of the research for the production of computers, mobile phones and smart TVs.
The technology developed by BeSang allows vertical memory cells to be stacked on top of conventional CMOS logic within a semiconductor chip, using seamless and unlimited interconnects between device layers.
The solution for a 6-transistor type SRAM memory cell that Renesas Technology and Matsushita have developed has two elements.
In addition, the excellent adhesion between the Ta2O5 interfacial layer and phase-change film has the potential to provide enhanced stability in memory cell fabrication.
It was designed with the help of mathematical simulations specifically for use in phase-change memory cells.
To create so-called nonvolatile electronic memory, the researchers built one-bit, prototype memory cells from layers of metal and semiconductors, manipulating the energy barriers that appear naturally at the interfaces.
Stable operation was verified by a 65nm test chip containing an 8Mbit, 6-transistor type SRAM with the world's smallest level memory cell area: 0.
In a dynamic random-access memory (D-RAM) computer chip, "an individual memory cell consists of, among other things, small capacitors which are either charged or uncharged," Davis exmplains.
Renesas' TTRAM technology offers a dynamic memory cell structure implemented on standard SOI-CMOS technology.