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Last year our Research arm demonstrated Phase Change Memory as a viable DRAM performance alternative at a new price and capacity tier bridging main memory and persistent storage.
Next generation memory technologies covered in this report are the "non-volatile next generation memory technologies" such as Memristor or Resistive Random Access Memory (ReRAM), Phase Change Memory (PCM), Magneto-resistive Random Access Memory (MRAM), and Ferroelectric Random Access Memory (FeRAM), among other technologies.
Also, the market is witnessing increasing adoption of atomic layer deposition technique in several emerging technologies such as photovoltaic, energy and phase change memory in microelectronics.
2 expand the system's capabilities for testing all types of non-volatile memory devices, including flash, phase change memory (PRAM and PC-RAM), resistive memory (RRAM or ReRAM), and magnetoresistive (MRAM) memory devices.
Next generation memory technologies covered in this report arethe "non-volatile next generation memory technologies" such as Memristor or Resistive Random Access Memory (ReRAM), Phase Change Memory (PCM), Magneto-resistive Random Access Memory (MRAM), and Ferroelectric Random Access Memory (FeRAM),among other technologies.
NAND flash suppliers are actively exploring a variety of alternatives including spin-torque-transfer MRAM, phase change memory, conductive bridge memory or metal oxide-based valence change memory.
Applications for Future Non-Volatile Memory in SSDs The memory used in this SSD consists of Phase Change Memory (PCM) components with a capacity of 1Gb.
The technologies covered were high-k/metal gate stacks for Silicon (Si), Silicon Germanium (SiGe), III-V high performance MOSFETs, metal/high-k/metal stacks for resistance change memory, flash memory, and phase change memory.
introduced a set of innovative products today based on the new class of memory technology called phase change memory (PCM).
Common applications include non-volatile memory devices (NVM) such as Flash and phase change memory, isothermal characterization on silicon-on-insulator (SOI) devices and compound semiconductors, and transient characteristics of new materials such as high-K dielectrics.
Phase Change Memory, a type of non-volatile computer memory also known as PRAM, PCM, and PCRAM, is a new and promising technology.