References in periodicals archive ?
7TH INNING STRETCH Strained silicon has become ready for the production line at just the right time.
The SSDOI structure was created by transferring strained Si grown epitaxially, or layer by layer, on relaxed SiGe to a buried oxide layer.
In the strained silicon, electrons experience less resistance and flow up to 70 percent faster, which can lead to chips that are up to 35 percent faster - without having to shrink the size of transistors.